ONSEMI FQB10N20TM MOSFET

ONSEMI FQB10N20TM MOSFET

ONSEMI FQB10N20TM MOSFET

It is a type of field-effect transistor (FET) that uses a metal-oxide-semiconductor structure to control the flow of electrical current. They are widely used in electronic devices and integrated circuits due to their high efficiency, fast switching speeds, and ability to handle high power levels.

Product Specification:

• Manufacturer: ONSEMI
• Vds – Drain-Source Breakdown Voltage: 200 V
• Id – Continuous Drain Current: 10 A
• Rds On – Drain-Source Resistance: 280 mOhms
• Vgs – Gate-Source Voltage: – 30 V, + 30 V
• Minimum Operating Temperature: – 55 C
• Maximum Operating Temperature: + 150 C
• Height: 4.83 mm
• Length: 10.67 mm
• Width: 9.65 mm
• Unit Weight: 4 g